Materials Performance
Item
Specification
Inspection Method
Growth Mode
NS
--
Crystallinity
Monocrystalline
Preferential Etch Techniques
Conductive Type
P-Type
P / N tester
Size
M6: 166mm * 223mm M10: 182mm * 247mm
Wafer Inspection System
Thickness
165 ﹢20/﹣10 µm 160 ﹢20/﹣10 µm 155 ﹢20/﹣10 µm 150 ﹢10/﹣10 µm
Wafer Inspection System
Item:
Growth Mode
Specification:
NS
Inspection Method:
--
Item:
Crystallinity
Specification:
Monocrystalline
Inspection Method:
Preferential Etch Techniques
Item:
Conductive Type
Specification:
P-Type
Inspection Method:
P / N tester
Item:
Size
Specification:
M6: 166mm * 223mm M10: 182mm * 247mm
Inspection Method:
Wafer Inspection System
Item:
Thickness
Specification:
165 ﹢20/﹣10 µm 160 ﹢20/﹣10 µm 155 ﹢20/﹣10 µm 150 ﹢10/﹣10 µm
Inspection Method:
Wafer Inspection System
Electrical Property
Item
Specification
Inspection Method
Electrical Resistivity
0.4-1.1 ohm.cm
Wafer Inspection System
Minority Carrier Lifetime
≥50us
Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)
Oxygen Content
≤8E + 17 at/cm³
FTIR spectrometer
Carbon Content
≤ 5E + 16 at/ cm³
FTIR spectrometer
Item:
Electrical Resistivity
Specification:
0.4-1.1 ohm.cm
Inspection Method:
Wafer Inspection System
Item:
Minority Carrier Lifetime
Specification:
≥50us
Inspection Method:
Sinton BCT-400 QSSPC Transient photoconductive decay (with injection level: 1E15 cm-3)
Item:
Oxygen Content
Specification:
≤8E + 17 at/cm³
Inspection Method:
FTIR spectrometer
Item:
Carbon Content
Specification:
≤ 5E + 16 at/ cm³
Inspection Method:
FTIR spectrometer

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